Thermal Properties of Tri (o-tolyl)bismuth for Preparation
of Oxide Thin Films by Metalorganic Chemical Vapor Deposition

Yuzo TASAKI*, Junichi ISHIAI, Shuji YOSHIZAWA and Yasuo KUNIYA††

Superconducting Product Development Center, Dowa Mining Co. Ltd.;
277-1 Tobuki-machi, Hachioji-shi 192-0001 Japan
Advanced Materials Research and Development Center, Meisei University;
2-1-1 Hodokubo, Hino-shi 191-8506 Japan
†† Department of Applied Chemistry, Faculty of Science and Engineering, Chuo University;
1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-0003 Japan

Thermal properties of tri (o-tolyl)bismuth (Bi (o-Tol)3) used as a bismuth precursor for metalorganic chemical vapor deposition (MOCVD) were evaluated. The saturated vapor pressure of Bi (o-Tol)3 was observed under the decomposition point, about 210 °C by means of vapor pressure measurement. The temperature dependence of the saturated vapor pressure of Bi (o-Tol)3 was determined as follows, log P (evap.)Torr=−6267/T+13.45. It was confirmed that Bi (o-Tol)3 has higher thermal stability compared with a conventional bismuth precursor, triphenylbismuth (BiPh3) by thermogravimetry and differential thermal analysis measurements of the compounds before and after preparation of oxide thin films by MOCVD method.

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